High Mobility NMOSFET Structure With High- Dielectric
نویسندگان
چکیده
HighNMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a highdielectric layer ( = 20). Electron mobilities of 6000 and 3822 cm Vs have been measured for sheet carrier concentrations of 2–3 10 and = 5 85 10 cm , respectively. Sheet resistivities as low as 280 sq have been obtained.
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